Etching characteristics and application of physical-vapor-deposited amorphous carbon for multilevel resist

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 4, 2008, Pages 861-864

  Kim, H T ^a   Kwon, B S ^a   Lee, N E ^a   Park, Y S ^a   Cho, H J ^a   Hong, B ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ARGON; ASPECT RATIO; DIMENSIONAL STABILITY; ETCHING; FLOW RATE; INDUCTIVELY COUPLED PLASMA; OPTICAL DESIGN; PLASMAS; VAPORS;

AMORPHOUS CARBON (A-C); AR PLASMAS; CAPACITIVELY COUPLED PLASMA (CCP); DUAL FREQUENCY; ETCH RATES; ETCHING CHARACTERISTICS; HARD MASKS; MASK LAYERS; OXIDE LAYERS; POWER RATIOS; PROCESS PARAMETERS;

AMORPHOUS CARBON;

EID: 46449114268     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2936231     Document Type: Article

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