A CD AFM study of the plasma impact on 193nm Photoresist LWR: Role of plasma UV and ions

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7272, Issue , 2009, Pages

  Pargon, E ^a   Martin, M ^a   Menguelti, K ^a   Azarnouche, L ^a   Foucher, J ^b   Joubert, O ^a  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^b CEA LETI   (France)

Author keywords

193nm photoresist; Linewidth roughness; Plasma etching processes; Plasma UV light

Indexed keywords

193 NM PHOTORESISTS; 193NM PHOTORESIST; AFM; LINEWIDTH ROUGHNESS; OPTICAL LITHOGRAPHY; PHOTORESIST PATTERNS; PLASMA ETCHING PROCESS; PLASMA ETCHING PROCESSES; PLASMA EXPOSURE; RESIST PATTERN; SURFACE-ROUGHENING; UNDERLAYERS; UV- AND; VUV LIGHT;

LINEWIDTH; LITHOGRAPHY; PHOTORESISTORS; PHOTORESISTS; PLASMA ETCHING; PLASMAS; ROUGHNESS MEASUREMENT; SURFACE TREATMENT;

PROCESS CONTROL;

EID: 66649115078     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.813493     Document Type: Conference Paper

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