Improvement in gate LWR with plasma curing of ArF photoresists

Thin Solid Films

Volumn 515, Issue 12, 2007, Pages 4928-4932

  Ando, A ^a   Matsui, E ^a   Matsuzawa, N N ^a   Yamaguchi, Y ^a   Kugimiya, K ^a   Yoshida, M ^a   Salam, K M A ^a   Kusakabe, T ^a   Tatsumi, T ^a  

^a SONY CORPORATION   (Japan)

Author keywords

ArF; HBr plasma; Lactonyl unit; LWR

Indexed keywords

ARGON; CURING; GATES (TRANSISTOR); GLASS TRANSITION; PLASMAS;

HBR PLASMAS; HETEROCYCLIC UNITS; LACTONYL UNITS; LINE WIDTH ROUGHNESS (LWR);

PHOTORESISTS;

EID: 33947122085     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.10.051     Document Type: Article

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