Effects of various plasma pretreatments on 193 nm photoresist and linewidth roughness after etching

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 6, 2006, Pages 2645-2652

  Kim, Myeong Cheol ^a   Shamiryan, Denis ^b   Jung, Youngjae ^a   Boullart, Werner ^b   Kang, Chang Jin ^a   Cho, Han Ku ^a  

^a SAMSUNG Electronics   (South Korea)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PLASMA APPLICATIONS; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS;

LOW-FREQUENCY ROUGHNESS; PLASMA PROCESSES;

PHOTORESISTS;

EID: 33845260709     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2366616     Document Type: Article

References (16)

1. H. Ito, IBM J. Res. Dev. 45, 683 (2001).
2. D. Attwood, J. Phys. D 37 (2004).
3. G. M. Wallraff, J. Vac. Sci. Technol. B 11, 2783 (1993).
4. H. Gokan, S. Esho, and Y. Ohnishi, J. Electrochem. Soc. 130, 143 (1983).
5. T. Sarubbi, M. Ross, M. Neisser, T. Kocab, B. Beauchemin, W. Livesay, S. Wong, and W. Ng, Proc. SPIE 4345, 21 (2001).
6. M. S. Kim, J. W. Park, H. J. Kim, B. J. Jun, M. G. Gil, B. H. Kim, M. Ross, and W. Livesay, Proc. SPIE 4345, 737 (2001).
7. J. Kim, Y. S. Chae, W. S. Lee, W. Shon, C. J. Kang, W. S. Han, and J. T. Moon, J. Vac. Sci. Technol. B 21, 790 (2003).
8. L. Ling, X. Hua, X. Li, G. S. Oehrlein, E. A. Hudson, P. Lazzeri, and M. Anderle, J. Vac. Sci. Technol. B 22, 2594 (2004).
9. N. Negishi, H. Takesue, M. Sumiya, T. Yoshida, Y. Momonoi, and M. Izawa, J. Vac. Sci. Technol. B 23, 217 (2005).
10. B. J. Lin, J. Microlithogr., Microfabr., Microsyst. 533, 3 (2004).
11. P. Oldiges, Q. Lin, K. Petrillo, M. Sanchez, M. Ieong, and M. Hargrove, Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices, Seattle, WA, 6-8 September 2000 (IEEE, New York, 2000), p. 131.
12. C. H. Diaz, H.-J. Tao, Y.-C. Ku, A. Yen, and K. Young, IEEE Electron Device Lett. 22, 287 (2001).
13. H.-W. Kim, J.-Y. Lee, J. Shin, S.-G. Woo, H.-K. Cho, and J.-T. Moon, IEEE Trans. Electron Devices 51, 1984 (2004).
14. H. Struyf, Q. T. Le, T. Dupont, W. Boullart, and S. Vanhaelemeersch, 26th International Symposium on Dry Process, Tokyo, Japan, 30 November-1 December 2004 (unpublished), p. 1-05.
15. A. P. Mahorowala, K.-J. Chen, R. Sooriyakumaran, A. Clancy, D. Murthy, and S. Rasgon, Proc. SPIE 5753, 380 (2005).
16. The International Technology Roadmap for Semiconductor (Semiconductor Industry Association, San Jose, CA, 2003).