Large improvement of data retention in nanocrystal-based memories on silicon using InAs quantum dots embedded in SiO2

IEEE Transactions on Electron Devices

Volumn 56, Issue 11, 2009, Pages 2657-2663

  Hocevar, Moïra ^a,b   Baboux, Nicolas ^a   Poncet, Alain ^a   Gendry, Michel ^c   Souifi, Abdelkader ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c ECOLE CENTRALE DE LYON   (France)

Author keywords

III V semiconductors; InAs quantum dots; Nanocrystals; Nonvolatile memory; Retention kinetics; Retention modeling; Retention time; Writing erasing kinetics

Indexed keywords

III-V SEMICONDUCTORS; INAS QUANTUM DOTS; NONVOLATILE MEMORY; RETENTION KINETICS; RETENTION MODELING; RETENTION TIME; WRITING/ERASING KINETICS;

ELECTRIC PROPERTIES; INDIUM ARSENIDE; NANOCRYSTALS; SEMICONDUCTING INDIUM; SILICON COMPOUNDS; SILICON OXIDES; SOLID-STATE SENSORS; WIND TUNNELS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70350741204     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2030659     Document Type: Article

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