InAs nanocrystals on Si O2 Si by molecular beam epitaxy for memory applications

Applied Physics Letters

Volumn 91, Issue 13, 2007, Pages

  Hocevar, Moïra ^a   Regreny, Philippe ^a   Descamps, Armel ^a   Albertini, David ^a   Saint Girons, Guillaume ^a   Souifi, Abdelkader ^a   Gendry, Michel ^a   Patriarche, Gilles ^b  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRONS; INDIUM COMPOUNDS; NANOCRYSTALS; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

GROWTH PARAMETERS; INITIAL INJECTED ELECTRONS; MEMORY STRUCTURE; SIZE DISPERSION;

MOLECULAR BEAM EPITAXY;

EID: 34848842405     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2793694     Document Type: Article

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