Band offsets of high K gate oxides on high mobility semiconductors

Materials Science and Engineering: B

Volumn 135, Issue 3, 2006, Pages 267-271

  Robertson, J ^a   Falabretti, B ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Electron states; GaAs; Metal oxide semiconductor structures; Schottky barrier

Indexed keywords

CARRIER MOBILITY; DIELECTRIC MATERIALS; ELECTRON ENERGY LEVELS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE;

CONDUCTION BAND; GATE DIELECTRICS; HIGH MOBILITY SEMICONDUCTORS; NEUTRALITY LEVELS;

MOS DEVICES;

EID: 33750743451     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.08.017     Document Type: Article

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