Electrical study of memory effects in InAs quantum dots embedded in SiO2 on silicon substrates

Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008

Volumn , Issue , 2008, Pages 188-191

  Hocevar, Moira ^a   Baboux, Nicolas ^a   Poncet, Alain ^a   Regreny, Philippe ^a   Gendry, Michel ^a   Souifi, Abdelkader ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

Data retention; MBE; Memory; Nanocrystals; Nanoelectronics; Quantum dots

Indexed keywords

ATOMS; CRYSTAL GROWTH; DATA STORAGE EQUIPMENT; GERMANIUM; INDIUM ARSENIDE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOELECTRONICS; NANOSCIENCE; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON COMPOUNDS; TUNNELS;

CRYSTALLINE QUALITIES; DATA RETENTION; DATA RETENTIONS; ELECTRICAL STUDIES; GERMANIUM QUANTUM DOTS; HIGH RESOLUTIONS; INAS QUANTUM DOTS; INDUSTRIAL REQUIREMENTS; INJECTED ELECTRONS; LOW SIZES; MBE; MEMORY; MEMORY EFFECTS; MEMORY STRUCTURES; MOLECULAR-BEAM EPITAXIES; NONVOLATILE MEMORIES; OPERATING VOLTAGES; OPTIMIZED STRUCTURES; QUANTUM DOTS; RETENTION TIMES; SILICON SUBSTRATES; TEM MEASUREMENTS; TEST STRUCTURES; TUNNEL OXIDE]; TUNNEL OXIDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 56349116306     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICONN.2008.4639278     Document Type: Conference Paper

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