On the saturation mechanism in the Ge nanocrystals-based non-volatile memory

Solid-State Electronics

Volumn 50, Issue 5, 2006, Pages 769-773

  Kanoun, M ^a   Busseret, C ^a   Baron, T ^b   Souifi, A ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b CEA LETI   (France)

Author keywords

C V; Charging; Ge nanocrystals; Memory; Retention; Saturation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELD EFFECTS; EMBEDDED SYSTEMS; HOLE MOBILITY; NANOSTRUCTURED MATERIALS; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING GERMANIUM;

CHARGING HOLES; GE NANOCRYSTALS; RETENTION; SATURATION (SEMICONDUCTORS);

NONVOLATILE STORAGE;

EID: 33746866719     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.02.003     Document Type: Article

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