Carrier storage time of milliseconds at room temperature in self-organized quantum dots

Applied Physics Letters

Volumn 89, Issue 7, 2006, Pages

  Marent, A ^a   Geller, M ^a   Bimberg, D ^a   Vasi'ev, A P ^b   Semenova, E S ^b   Zhukov, A E ^b   Ustinov, V M ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; DYNAMIC RANDOM ACCESS STORAGE; GROUND STATE; SEMICONDUCTING GALLIUM ARSENIDE; THERMOANALYSIS;

CARRIER STORAGE; DYNAMIC RANDOM ACCESS MEMORY (DRAM); HOLE EMISSION; SELF-ORGANIZED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33747509668     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2337000     Document Type: Article

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