Electron retention in InAs-nanocrystals embedded in SiO2/Si for non-volatile memories

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 12, 2008, Pages 3601-3604

  Hocevar, M ^a   Regreny, P ^a   Poncet, A ^a   Gendry, M ^a   Souifi, A ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DATA RETENTIONS; DIELECTRIC BARRIERS; DIRECT TUNNELLING; ELECTRICAL CHARACTERIZATIONS; ELECTRON DISCHARGING; ELECTRON STORAGES; FABRICATED DEVICES; MODEL-BASED; REAL INTERESTS; RETENTION TIMES; SEMICONDUCTOR STRUCTURES; TUNNEL LAYERS; VOLATILE MEMORIES;

DATA STORAGE EQUIPMENT; ELECTRONS; INDIUM ARSENIDE; NANOCRYSTALLINE ALLOYS; NANOELECTRONICS; NANOTECHNOLOGY; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON COMPOUNDS;

NANOCRYSTALS;

EID: 57349114018     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200780170     Document Type: Conference Paper

References (7)

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