Microstructure of GaN layers grown on Si(1 1 1) revealed by TEM

Vacuum

Volumn 71, Issue 1-2 SPEC., 2003, Pages 285-291

  Dobos, L ^a   Pecz B ^a   Feltin, E ^b   Beaumont, B ^b   Gibart, P ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b CRHEA CNRS   (France)

Author keywords

Dislocations; Electron microscopy; GaN; Nitrides; Superlattices

Indexed keywords

CRYSTALLINE MATERIALS; MICROSTRUCTURE; SILICON; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY;

SILICON SUBSTRATES;

GALLIUM COMPOUNDS;

EID: 0344519497     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00752-2     Document Type: Conference Paper

References (9)

1. Morkoç H., Strite S., Gao G.B., Lin M.E., Sverdlov B., Burns M. J Appl Phys. 76(3):1994;1363.
2. Ning X.J., Chien F.R., Pirouz P., Yang J.W., Asif Khan M. J Mater Res. 11(3):1996;580.
3. Nakamura S. MRS Bull. 22:1997;2.
4. Pearton S.J., Kuo C. MRS Bull. 22:1997;17.
5. Liu L., Edgar J. Mater Sci Eng R. 37:2002;61-127.
6. Lee L.H., Lim S.J., Park Y. J Cryst Growth. 235:2002;73.
7. Feltin E., Beaumont B., Laüght M., de Mierry P., Vennéguès P., Lahrèche H., Leroux M., Gibart P. Appl Phys Lett. 79:2001;3230.
8. Barna Á, Pécz B, Radnóczi G. In: Handbook of Microscopy, vol. 3. Weinhein: VCH Verlag, 1997. p. 751.
9. Sáfrán G., Grenet T. Microsc Res Technol. 56:2002;308.