Evolution of threading dislocations in MOCVD-grown GaN films on (1 1 1) Si substrates

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 217-222

  Weng, X ^a   Raghavan, S ^a   Acord, J D ^a   Jain, A ^a   Dickey, E C ^a   Redwing, J M ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides; B1. Silicon

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MULTILAYERS; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYERS; INTERLAYERS (IL); THREADING DISLOCATIONS;

THIN FILMS;

EID: 33847270551     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.030     Document Type: Article

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