Microstructure of GaN deposited by lateral confined epitaxy on patterned Si (111)

Journal of Electronic Materials

Volumn 31, Issue 1, 2002, Pages 88-93

  Wu, Feng ^a   Zamir, Shai ^b   Meyler, Boris ^b   Salzman, Joseph ^b   Golan, Yuval ^a  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Lateral growth; Metalorganic chemical vapor deposition; TEM; Threading dislocations; V defects

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

LATERAL GROWTH; THREADING DISLOCATIONS; V-DEFECTS;

GALLIUM NITRIDE;

EID: 0012670575     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0178-4     Document Type: Article

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