Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model

Journal of Computational Electronics

Volumn 8, Issue 2, 2009, Pages 60-77

  Fischetti, M V ^a   Jin, S ^b   Tang, T W ^a   Asbeck, P ^c   Taur, Y ^c   Laux, S E ^d   Rodwell, M ^e   Sano, N ^f  

^a University of Massachusetts   (United States)

^b SYNOPSYS INC   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d IBM T J WATSON RESEARCH CENTER   (United States)

^e University of California   (United States)

^f UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Coulomb interaction; MOSFETs scaling; Source starvation; Virtual source

Indexed keywords

ALTERNATIVE SUBSTRATES; COULOMB EFFECTS; DENSITY-OF-STATES; GATE LENGTH; HIGH MOBILITY; HIGH-MOBILITY SEMICONDUCTORS; HISTORICAL PERFORMANCE; INTRINSIC PERFORMANCE; MOSFETS; MOSFETS SCALING; NUMERICAL SIMULATION; PERFORMANCE LIMITS; QUANTITATIVE TOOL; SI CMOS; SOURCE STARVATION; VIRTUAL SOURCE; VIRTUAL SOURCES;

COULOMB INTERACTIONS; ELECTRON-ELECTRON INTERACTIONS; MOSFET DEVICES; SIMULATORS;

SILICON;

EID: 70350618608     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-009-0277-z     Document Type: Article

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