Experimental verification of the nature of the high energy tail in the electron energy distribution in n-channel MOSFETs

IEEE Electron Device Letters

Volumn 22, Issue 10, 2001, Pages 478-480

  Anil, K G ^a,b   Mahapatra, S ^a,c   Eisele, I ^b  

^a IEEE   (Germany)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^c AGERE SYSTEMS   (United States)

Author keywords

Electron energy distribution; Electron electron interactions; Hot carrier; Impact ionization; Monte Carlo simulation; MOSFET; Silicon; Thermal tail

Indexed keywords

ELECTRON-ELECTRON INTERACTIONS (EEI);

CHANNEL CAPACITY; COMPUTER SIMULATION; IMPACT IONIZATION; MONTE CARLO METHODS; SEMICONDUCTING SILICON;

MOSFET DEVICES;

EID: 0035474746     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.954917     Document Type: Article

References (17)

1. The impact of voltage scaling on electron heating and device performance of submicrometer MOSFET's
2. A multiband Monte Carlo approach to Coulomb interaction for device analysis
3. Hot carrier effects in short MOSFET's at low applied voltages
4. Monte Carlo study of sub-band-gap impact ionization in small silicon field-effect transistors
5. A one-dimensional solution of the Boltzmann transport equation including electron-electron interactions
6. Low-voltage hot electrons and soft-programming lifetime prediction in nonvolatile memory cells
7. Clear observation of sub-band gap impact ionization at room temperature and below in 0.1 μm Si MOSFET's
8. Role of inversion layer quantization on sub-bandgap impact ionization in deep-submicron n-channel MOSFET's
9. Low voltage hot-electron effects in short channel MOSFET's
10. Hot electrons in one dimension
11. Why the effective temperature of the hot electron tail approaches the lattice temperature
12. Monte Carlo simulation of CHISEL flash memory cell
13. Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability
14. Bias and temperature dependence of homogenous hot-electron injection from silicon into silicon dioxide at low voltages
15. Low-level Avalanche multiplication in IGFET's
16. Coupled Monte Carlo-drift diffusion analysis of hot-electron effects in MOSFET's
17. Drain bias dependence of gate oxide reliability in conventional and asymmetrical channel MOSFET's in the low voltage regime