Quasi-ballistic transport in nanowire field-effect transistors

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 2918-2930

  Gnani, Elena ^a   Gnudi, Antonio ^a   Reggiani, Susanna ^a   Baccarani, Giorgio ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

1 D Boltzmann transport equation; Ballistic transport; Nanowire FET

Indexed keywords

BACKSCATTERING; BALLISTICS; BOLTZMANN EQUATION; CIVIL AVIATION; ELASTIC SCATTERING; EXPLOSIVES; MESFET DEVICES; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; PERIODIC STRUCTURES; SCATTERING; TRANSISTORS; TRANSPORT PROPERTIES;

1-D BOLTZMANN TRANSPORT EQUATION; BACKSCATTERING COEFFICIENTS; BALLISTIC TRANSPORT; BALLISTIC TRANSPORTS; BOLTZMANN TRANSPORT EQUATIONS; DEVICE LENGTHS; ELASTIC COLLISIONS; EXACT ANALYTICAL SOLUTIONS; INELASTIC COLLISIONS; LONGITUDINAL DIRECTIONS; NANOWIRE FET; POISSON SOLVERS; POTENTIAL PROFILES; SCATTERING PROBABILITIES; SIMULATION CODES; TRANSIT TIMES; TRANSVERSE DIRECTIONS;

FIELD EFFECT TRANSISTORS;

EID: 56549121570     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2005178     Document Type: Article

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