A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors at very low drain voltages

Solid-State Electronics

Volumn 47, Issue 6, 2003, Pages 995-1001

  Anil, K G ^a,c   Mahapatra, S ^b   Eisele, I ^c  

^a Microelectronics Center   (Belgium)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^c BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

Electron energy distribution; Electron electron interactions; Hot carrier; Impact ionization; Monte Carlo simulation; MOSFET; Silicon; Thermal tail

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; HOT CARRIERS; MONTE CARLO METHODS; MOSFET DEVICES;

DRAIN VOLTAGES;

IMPACT IONIZATION;

EID: 0037409021     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00458-6     Document Type: Article

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