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Volumn 5, Issue 1, 2008, Pages 102-106
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3D Monte Carlo simulation including full Coulomb interaction under high electron concentration regimes
a
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Author keywords
[No Author keywords available]
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Indexed keywords
3D MONTE CARLO SIMULATION;
BACKGROUND IMPURITIES;
COULOMB POTENTIALS;
HIGH ELECTRON CONCENTRATION;
IMPURITY CONCENTRATIONS;
IN ORDER;
INTERNATIONAL CONFERENCES;
LATTICE MONTE CARLO (MC) SIMULATIONS;
MC APPROACH;
MESH SIZES;
MONTE CARLO (MC);
NONEQUILIBRIUM CARRIER DYNAMICS;
PARTICLE SIMULATIONS;
PLASMA FREQUENCIES;
POISSON;
REAL-SPACE;
SCATTERING MODELS;
SCATTERING PROCESSES;
SIMULATION PARAMETERS;
TIME STEPPING;
BIOMECHANICS;
CHARGED PARTICLES;
CIVIL AVIATION;
COSMIC RAY DETECTORS;
COULOMB INTERACTIONS;
CRYSTALS;
DYNAMICS;
ELECTRIC CONDUCTIVITY;
ELECTRIC FIELDS;
ELECTRON MOBILITY;
ELECTRONS;
FLOW INTERACTIONS;
FUNCTION EVALUATION;
IMPURITIES;
MATHEMATICAL MODELS;
MECHANICS;
MONTE CARLO METHODS;
MOSFET DEVICES;
NUMERICAL METHODS;
PLASMA WAVES;
POISSON EQUATION;
RESPIRATORY MECHANICS;
SCATTERING;
SEMICONDUCTOR COUNTERS;
SEMICONDUCTOR MATERIALS;
THREE DIMENSIONAL;
COULOMB BLOCKADE;
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EID: 45749092919
PISSN: 18626351
EISSN: None
Source Type: Journal
DOI: 10.1002/pssc.200776547 Document Type: Conference Paper |
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Times cited : (13)
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References (11)
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