Raman scattering as a tool for the evaluation of strain in GaN/AlN quantum dots: The effect of capping

Physical Review B - Condensed Matter and Materials Physics

Volumn 76, Issue 16, 2007, Pages

  Cros, A ^a   Garro, N ^a   Cantarero, A ^a   Coraux, J ^b   Renevier, H ^c   Daudin, B ^b  

^a UNIVERSITY OF VALENCIA   (Spain)

^b CEA GRENOBLE   (France)

^c LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 35148812971     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.76.165403     Document Type: Article

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