Effects of capping on GaN quantum dots deposited on Al0.5 Ga0.5 N by molecular beam epitaxy

Applied Physics Letters

Volumn 94, Issue 14, 2009, Pages

  Korytov, M ^a,b   Benaissa, M ^c   Brault, J ^a   Huault, T ^a,c   Neisius, T ^d   Vennegues P ^a,e  

^a CRHEA CNRS   (France)

^b UNIVERSITÉ CÔTE D'AZUR   (France)

^c NATIONAL CENTER FOR SCIENTIFIC AND TECHNICAL RESEARCH   (Morocco)

^d RIBER SA   (France)

^e Facult́ Saint J́rôme ^*  (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING PROCESS; GAN QUANTUM DOTS; MORPHOLOGICAL PROPERTIES; MORPHOLOGICAL TRANSITIONS; NEAREST NEIGHBORS; PYRAMIDAL SHAPES; SHAPE EVOLUTIONS; TRUNCATED PYRAMIDS; VOLUME CHANGES;

ALUMINUM; CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PHASE SEPARATION; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 64349105452     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3115027     Document Type: Article

References (23)

1. K. Kim and C. B. Park, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(98)00541-0 330, 139 (1998).
2. Y. Kawakami, Y. Narukawa, K. Sawada, S. Saijyo, S. Fujita, S. Fujita, and S. Nakamura, Mater. Sci. Eng., B MSBTEK 0921-5107 10.1016/S0921-5107(97)00187-6 50, 256 (1997).
3. S. -R. Jeon, Z. Ren, G. Cui, J. Su, M. Gherasimova, J. Hana, H. -K. Cho, and L. Zhou, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1867565 86, 082107 (2005).
4. B. Borisov, V. Kuryatkov, Yu. Kudryavtsev, R. Asomoza, S. Nikishin, D. Y. Song, M. Holtz, and H. Temkin, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2061856 87, 132106 (2005).
5. B. Damilano, N. Grandjean, F. Semond, J. Massies, and M. Leroux, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.124567 75, 962 (1999).
6. T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, L. Nguyen, M. Leroux, and J. Massies, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2841825 92, 051911 (2008).
7. D. Gerthsen, E. Hahn, B. Neubauer, V. Potin, A. Rosenauer, and M. Schowalter, Phys. Status Solidi C ZZZZZZ 1610-1634 0, 1668 (2003). 10.1002/pssc.200303129
8. M. J. Htch, E. Snoek, and R. Kilaas, Ultramicroscopy ULTRD6 0304-3991 10.1016/S0304-3991(98)00035-7 74, 131 (1998).
9. B. Daudin, F. Widmann, G. Feuillet, Y. Samson, M. Arlery, and J. L. Rouviere, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.56.R7069 56, R7069 (1997).
10. P. Kratzer, Q. K. K. Liu, P. Acosta-Diaz, C. Manzano, G. Constantini, R. Songmuang, A. Rastelli, O. G. Schmidt, and K. Kern, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.73.205347 73, 205347 (2006).
11. F. Widmann, B. Daudin, G. Feuillet, Y. Samson, J. L. Rouvìre, and N. Pelekanos, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.367878 83, 7618 (1998).
12. N. Gogneau, D. Jalabert, E. Monroy, T. Shibata, M. Tanaka, and B. Daudin, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1592866 94, 2254 (2003).
13. N. Gogneau, D. Jalabert, E. Monroy, E. Sarigiannidou, J. L. Rouviere, T. Shibata, M. Tanaka, J. M. Gerard, and B. Daudin, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1759785 96, 1104 (2004).
14. Z. Zhong, J. Stangl, F. Schaffler, and G. Bauer, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1622785 83, 3695 (2003).
15. A. Hesse, J. Stangl, V. Holy, T. Roch, G. Bauer, O. G. Schmidt, U. Denker, and B. Struth, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.66.085321 66, 085321 (2002).
16. J. M. Ulloa, P. M. Koenraad, E. Gapihan, A. Ĺtoublon, and N. Bertru, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2771063 91, 073106 (2007).
17. F. Ferdos, S. Wang, Y. Wei, M. Sadeghi, Q. Zhao, and A. Larsson, J. Cryst. Growth JCRGAE 0022-0248 10.1016/S0022-0248(02)02471-5 251, 145 (2003).
18. G. Costantini, A. Rastelli, C. Manzano, P. Acosta-Diaz, R. Songmuang, G. Katsaros, O. G. Schmidt, and K. Kern, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.96.226106 96, 226106 (2006).
19. J. Coraux, B. Amstatt, J. A. Budagoski, E. Bellet-Amalric, J. -L. Rouvìre, V. Favre-Nicolin, M. G. Proietti, H. Renevier, and B. Daudin, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.74.195302 74, 195302 (2006).
20. E. Sarigiannidou, E. Monroy, B. Daudin, and J. L. Rouviere, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2123394 87, 203112 (2005).
21. J. M. Ulloa, C. Celebi, P. M. Koenraad, A. Simon, E. Gapihan, A. Ĺtoublon, N. Bertru, I. Drouzas, D. J. Mowbray, M. J. Mowbray, M. J. Streer, and M. Hopkinson, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2722738 101, 081707 (2007).
22. J. Brault, M. Gendry, O. Marty, M. Pitaval, J. Olvares, G. Grenet, and G. Hollinger, Appl. Surf. Sci. ASUSEE 0169-4332 10.1016/S0169-4332(00)00254-3 162, 584 (2000).
23. C. Priester and G. Grenet, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.64.125312 64, 125312 (2001).