Nucleation and growth of GaN observed by in situ line-of-sight mass spectrometry

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 505-509

  Averbeck, R ^a   Koblmueller, G ^a,b   Riechert, H ^a   Pongratz, P ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

A1. Atomic force microscopy; A1. Desorption; A1. Nucleation; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

ATOMIC FORCE MICROSCOPY; DESORPTION; GALLIUM NITRIDE; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; NUCLEATION; REACTION KINETICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

HOMOEPITAXY;

SEMICONDUCTOR GROWTH;

EID: 0037381609     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02281-9     Document Type: Conference Paper

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