Critical film thickness dependence on As flux in In0.27Ga 0.73As/GaAs (001) films

Applied Physics Letters

Volumn 90, Issue 9, 2007, Pages

  Riposan, A ^a   Mirecki Millunchick, J ^a   Pearson, Chris ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b UNIVERSITY OF MICHIGAN FLINT   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; HIGH ENERGY ELECTRON DIFFRACTION; PHASE COMPOSITION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMOANALYSIS;

CRITICAL THICKNESS (TSK); HIGH RESOLUTION; NONPLANAR GROWTH;

FILM THICKNESS;

EID: 33847657894     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2476259     Document Type: Article

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