Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion

Applied Physics Letters

Volumn 93, Issue 18, 2008, Pages

  Landr O ^a   Songmuang, R ^a,b   Renard, J ^a   Bellet Amalric, E ^a   Renevier, H ^c   Daudin, B ^a  

^a LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^b CEA LETI   (France)

^c MINATEC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; INDIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES;

ADATOM DIFFUSION; CATALYST-FREE GROWTH; ENHANCED DIFFUSION; GAN LAYERS; GAN NANOWIRES; GROWTH OF GAN; MODERATE TEMPERATURE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

GALLIUM NITRIDE;

EID: 55849135205     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3013840     Document Type: Article

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