Monte Carlo simulation of impact ionization and current multiplication in short GaAs p+in+ diodes

Semiconductor Science and Technology

Volumn 12, Issue 1, 1997, Pages 111-120

  Dunn, G M ^a   Rees, G J ^a   David, J P R ^a   Plimmer, S A ^a   Herbert, D C ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC CURRENTS; IONIZATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE;

CARRIER TRANSPORT; IMPACT IONIZATION;

SEMICONDUCTOR DIODES;

EID: 0030683780     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/1/019     Document Type: Article

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