Recent advances in avalanche photodiodes

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 10, Issue 4, 2004, Pages 777-787

  Campbell, Joe C ^a   Demiguel, Stephane ^a   Ma, Feng ^a   Beck, Ariane ^a   Guo, Xiangyi ^a   Wang, Shuling ^a   Zheng, Xiaoguang ^a   Li, Xiaowei ^a   Beck, Jeffrey D ^b   Kinch, Michael A ^b   Huntington, Andrew ^c   Coldren, Larry A ^c   Decobert, Jean ^d   Tscherptner, Nadine ^d  

^a The University of Texas at Austin   (United States)

^b DRS Sensors and Targeting Systems Inc   (United States)

^c University of California   (United States)

^d NOKIA RESEARCH CENTER   (United States)

Author keywords

Avalanche photodiodes (APDs); Impact ionization; Infrared; Multiplication noise; Photodetectors; Ultraviolet (UV)

Indexed keywords

ACOUSTIC NOISE; ARRAYS; AVALANCHE DIODES; BANDWIDTH; CURRENT DENSITY; ELECTRIC FIELDS; IMPACT IONIZATION; INFRARED RADIATION; OPTIMIZATION; PHONONS; PHOTODETECTORS; SEMICONDUCTOR MATERIALS; SENSITIVITY ANALYSIS; ULTRAVIOLET RADIATION; WAVEGUIDE COMPONENTS;

APD ARRAYS; AVALANCHES PHOTODIODES (APD); GAIN-BANDWIDTH; MULTIPLICATION NOISE;

PHOTODIODES;

EID: 7544227495     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2004.833971     Document Type: Article

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