Gain-bandwidth characteristics of thin avalanche photodiodes

IEEE Transactions on Electron Devices

Volumn 49, Issue 5, 2002, Pages 770-781

  Hayat, Majeed M ^a,b   Kwon, Oh Hyun ^b   Pan, Yi ^a,c   Sotirelis, Paul ^a,d,e   Campbell, Joe C ^a,f   Saleh, Bahaa E A ^a,g   Teich, Malvin Carl ^a,g  

^a IEEE   (United States)

^b University of New Mexico   (United States)

^c GEORGIA STATE UNIVERSITY   (United States)

^d UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^e WRIGHT PATTERSON AIR FORCE BASE   (United States)

^f The University of Texas at Austin   (United States)

^g Boston University   (United States)

Author keywords

Al 0.2Ga 0.8As; Autocorrelation function; Buildup time; Dead space; Frequency response; GaAs; Impact ionization; Impulse response; In 0.52Al 0.48As; InP; Noise reduction; Power spectral density; Thin avalanche photodiodes

Indexed keywords

AUTOCORRELATION FUNCTION; GAIN BANDWIDTH CHARACTERISTICS; NOISE REDUCTION; POWER SPECTRAL DENSITY; THIN AVALANCHE PHOTODIODES;

AVALANCHE DIODES; ELECTRIC FREQUENCY MEASUREMENT; FREQUENCY RESPONSE; GAIN MEASUREMENT; IMPULSE RESPONSE; IONIZATION; PHOTOCURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; ULTRAFAST PHENOMENA;

PHOTODIODES;

EID: 0036564313     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.998583     Document Type: Article

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