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Journal of Applied Physics

Volumn 87, Issue 11, 2000, Pages 7885-7891

Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p+-i-n+ diodes

(6) Ong, D S a Li, K F b Plimmer, S A b Rees, G J b David, J P R b Robson, P N b

a MULTIMEDIA UNIVERSITY (Malaysia)

b UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001297547 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.373472 Document Type: Article

Times cited : (42)

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