Monte Carlo simulation of noncubic symmetry semiconducting materials and devices

IEEE Transactions on Electron Devices

Volumn 47, Issue 10, 2000, Pages 1882-1890

  Brennan, Kevin F ^a,c   Bellotti, Enrico ^a   Farahmand, Maziar ^b   Nilsson, Hans Erik ^a   Paul Ruden P ^a   Zhang, Yumin ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b MID SWEDEN UNIVERSITY   (Sweden)

^c University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER MOBILITY; COMPUTER SIMULATION; ENERGY GAP; IMPACT IONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

BAND INTERSECTIONS; BRILLOUIN ZONE; CARRIER DYNAMICS;

MONTE CARLO METHODS;

EID: 0034294297     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.870567     Document Type: Article

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