Impact ionization model for full band Monte Carlo simulation in GaAs

Journal of Applied Physics

Volumn 79, Issue 5, 1996, Pages 2473-2480

  Jung, H K ^a,b   Taniguchi, K ^a   Hamaguchi, C ^a  

^a OSAKA UNIVERSITY   (Japan)

^b Kunsan National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000582711     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361176     Document Type: Article

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