Transport Parameters for Electrons and Holes

Nitride Semiconductor Devices: Principles and Simulation

Volumn , Issue , 2007, Pages 69-93

  Bellotti, Enrico ^a   Bertazzi, Francesco ^a,b  

^a Boston University   (United States)

^b POLITECNICO DI TORINO   (Italy)

Author keywords

AlN; Analytical models; Electrons; GaN; Holes; InN; Material properties; Nitride semiconductor devices; Numerical simulation model; Transport parameters

Indexed keywords

EID: 34547291830     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9783527610723.ch4     Document Type: Chapter

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