Monte Carlo Simulations of the Bandwidth of InAlAs Avalanche Photodiodes

IEEE Transactions on Electron Devices

Volumn 50, Issue 11, 2003, Pages 2291-2294

  Ma, Feng ^a   Li, Ning ^a   Campbell, Joe C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Avalanche multiplication; Avalanche photodiode; Bandwidth; Impact ionization; Impulse response; Monte Carlo methods

Indexed keywords

AVALANCHE DIODES; BANDWIDTH; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; IMPACT IONIZATION; MONTE CARLO METHODS; SEMICONDUCTING INDIUM COMPOUNDS;

CHARGE LAYER;

PHOTODIODES;

EID: 0242269421     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.818149     Document Type: Article

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