AlxGa1-xN ultraviolet avalanche photodiodes grown on GaN substrates

IEEE Photonics Technology Letters

Volumn 19, Issue 17, 2007, Pages 1313-1315

  Yoo, Dongwon ^a,b   Limb, Jae ^a   Ryou, Jae Hyun ^a   Zhang, Yun ^a   Shen, Shyh Chiang ^a   Dupuis, Rusell D ^a,b   Hanser, Drew ^c   Preble, Edward ^c   Evans, Keith ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

^c KYMA TECHNOLOGIES INC   (United States)

Author keywords

Aluminum gallium nitride; Avalanche photodiodes (APDs); Epitaxial growth; Gallium nitride

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; OPTICAL GAIN; ULTRAVIOLET DEVICES;

DISLOCATION DENSITY; EPITAXIAL STRUCTURE; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION;

AVALANCHE PHOTODIODES;

EID: 34548190277     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.902376     Document Type: Article

References (7)

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