Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 5217-5222

  Dupuis, Russell D ^a   Ryou, Jae Hyun ^a   Shen, Shyh Chiang ^a   Yoder, P Douglas ^a   Zhang, Yun ^a   Kim, Hee Jin ^a   Choi, Suk ^a   Lochner, Zachary ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; B2. Semiconducting III V materials

Indexed keywords

AVALANCHE PHOTODIODES; AVALANCHES (SNOWSLIDES); COST EFFECTIVENESS; GALLIUM NITRIDE; MATERIALS PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTONS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SNOW;

A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B2. SEMICONDUCTING III-V MATERIALS; BANDGAP; CONTROL APPLICATIONS; DETECTION OF PHOTONS; DEVICE FABRICATIONS; DEVICE TECHNOLOGIES; INTRINSIC PROPERTIES; MODE OPERATIONS; NITRIDE MATERIALS; SHORT WAVELENGTHS; ULTRA VIOLETS; UV DETECTIONS; UV SPECTRAL REGIONS;

GALLIUM ALLOYS;

EID: 56249114092     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.107     Document Type: Article

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