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Volumn 95, Issue 11, 2009, Pages

Defect-free single-crystal Ge island arrays on insulator by rapid-melting-growth combined with seed-positioning technique

(5) Toko, Kaoru a Sakane, Takashi a Tanaka, Takanori a Sadoh, Taizoh a Miyao, Masanobu a

a KYUSHU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEFECT-FREE; DEVICE SIZES; GE ISLAND; GROWTH PROCESS; LARGE SCALE INTEGRATED CIRCUIT; MULTI-FUNCTIONS; POSITIONING TECHNIQUES; SI (1 1 1); SI SUBSTRATES;

AMORPHOUS SILICON; DISLOCATIONS (CRYSTALS); INTEGRATED CIRCUITS; LSI CIRCUITS; SILICON; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

GERMANIUM;

EID: 70349498840 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3231925 Document Type: Article

Times cited : (30)

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