Ge diffusion and solid phase epitaxy growth to form Si 1 - XGex/Si and Ge on insulator structure

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 69-72

  Gao, Fei ^a   Lee, S J ^a   Balakumar, S ^b   Du, Anyan ^b   Foo, Yong Lim ^c   Kwong, Dim Lee ^d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d The University of Texas at Austin   (United States)

Author keywords

GOI; MOSFET; SiGe; Solid phase epitaxy

Indexed keywords

ANNEALING; GERMANIUM COMPOUNDS; MOSFET DEVICES; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GOI; SIGE; SOLID PHASE EPITAXY;

EPITAXIAL GROWTH;

EID: 33644904035     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.043     Document Type: Conference Paper

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