In situ observations of crystal growth behavior of silicon melt

Journal of Crystal Growth

Volumn 243, Issue 2, 2002, Pages 275-282

  Fujiwara, Kozo ^a   Nakajima, Keiji ^b   Ujihara, Toru ^a   Usami, Noritaka ^a   Sazaki, Gen ^a   Hasegawa, Hajime ^b   Mizoguchi, Shozo ^b   Nakajima, Kazuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Confocal scanning laser microscope; A1. Facet interface; A1. In situ observation; A1. Planar interface; A1. Undercooling; A2. Growth from melt; B1. Silicon

Indexed keywords

INFRARED IMAGING; INTERFACES (MATERIALS); MORPHOLOGY; NUCLEATION; SEMICONDUCTING SILICON;

CONFOCAL SCANNING LASER MICROSCOPE;

CRYSTAL GROWTH FROM MELT;

EID: 0036680087     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01521-X     Document Type: Article

References (25)