-
1
-
-
6344289325
-
A germanium back-contact type cell for thermophotovoltaic applications
-
Osaka, Japan, 11-18 May
-
Nagashima T., Okumura K., Muratal K., and Yamaguchi M. A germanium back-contact type cell for thermophotovoltaic applications. Proceedings of 3rd World Conference on Photovoltaic Energy Conversion. Osaka, Japan, 11-18 May (2003) 200-203
-
(2003)
Proceedings of 3rd World Conference on Photovoltaic Energy Conversion
, pp. 200-203
-
-
Nagashima, T.1
Okumura, K.2
Muratal, K.3
Yamaguchi, M.4
-
2
-
-
34247868155
-
40% efficient metamorphic GaInP/GaInAs/Ge multijunction solar cells
-
King R.R., Law D.C., Edmondson K.M., Fetzer C.M., Kinsey G.S., Yoon H., Sherif R.A., and Karam N.H. 40% efficient metamorphic GaInP/GaInAs/Ge multijunction solar cells. Appl. Phys. Lett. 90 (2007) 183516
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 183516
-
-
King, R.R.1
Law, D.C.2
Edmondson, K.M.3
Fetzer, C.M.4
Kinsey, G.S.5
Yoon, H.6
Sherif, R.A.7
Karam, N.H.8
-
3
-
-
0024057117
-
An antenna-coupled warm carrier device using polycrystalline Ge films
-
Inoue N., and Yasuoka Y. An antenna-coupled warm carrier device using polycrystalline Ge films. Jpn. J. Appl. Phys. 27 (1988) 1437-1439
-
(1988)
Jpn. J. Appl. Phys.
, vol.27
, pp. 1437-1439
-
-
Inoue, N.1
Yasuoka, Y.2
-
4
-
-
0031139781
-
Electrical properties of evaporated polycrystalline Ge thin-films
-
Kobayashi H., Inoue N., Uchida T., and Yasuoka Y. Electrical properties of evaporated polycrystalline Ge thin-films. Thin Solid Films 300 (1997) 138-143
-
(1997)
Thin Solid Films
, vol.300
, pp. 138-143
-
-
Kobayashi, H.1
Inoue, N.2
Uchida, T.3
Yasuoka, Y.4
-
5
-
-
0031358369
-
Electronic and mechanical properties of Ge films grown on glass substrates
-
Anaheim, CA, USA, 30 September-3 October
-
Ahrenkiel R.K., Ahrenkiel S.P., and AI-Jassim M.M. Electronic and mechanical properties of Ge films grown on glass substrates. Conf. Record of the 26th IEEE Photovoltaic Specialists Conference. Anaheim, CA, USA, 30 September-3 October (1997)
-
(1997)
Conf. Record of the 26th IEEE Photovoltaic Specialists Conference
-
-
Ahrenkiel, R.K.1
Ahrenkiel, S.P.2
AI-Jassim, M.M.3
-
6
-
-
30544447543
-
Poly-crystalline Ge thin films prepared by RF sputtering method for thermo photo voltaic application
-
Hoshi D., Nakamura I., and Isomura M. Poly-crystalline Ge thin films prepared by RF sputtering method for thermo photo voltaic application. Mater. Res. Soc. Symp. Proc. 862 (2005) 207
-
(2005)
Mater. Res. Soc. Symp. Proc.
, vol.862
, pp. 207
-
-
Hoshi, D.1
Nakamura, I.2
Isomura, M.3
-
7
-
-
0039149097
-
Aluminum-induced crystallization of hydrogenated amorphous germanium thin films
-
Chambouleyron I., Fajardo F., and Zanatta A.R. Aluminum-induced crystallization of hydrogenated amorphous germanium thin films. Appl. Phys. Lett. 79 (2001) 3233-3235
-
(2001)
Appl. Phys. Lett.
, vol.79
, pp. 3233-3235
-
-
Chambouleyron, I.1
Fajardo, F.2
Zanatta, A.R.3
-
8
-
-
0004881414
-
Laser crystallization and structuring of amorphous germanium
-
Mulato M., Toet D., Aichmayr G., Santos P.V., and Chambouleyron I. Laser crystallization and structuring of amorphous germanium. Appl. Phys. Lett. 70 (1997) 3570-3572
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 3570-3572
-
-
Mulato, M.1
Toet, D.2
Aichmayr, G.3
Santos, P.V.4
Chambouleyron, I.5
-
9
-
-
49249116627
-
Characterization of polycrystalline Ge thin films fabricated by short-pulse XeF excimer laser crystallization
-
Kuo C.-C. Characterization of polycrystalline Ge thin films fabricated by short-pulse XeF excimer laser crystallization. J. Russ. Laser Res. 29 (2008) 167-175
-
(2008)
J. Russ. Laser Res.
, vol.29
, pp. 167-175
-
-
Kuo, C.-C.1
-
10
-
-
0034229639
-
New approach for the fabrication of device-quality GeO/GeO2/SiO2 interfaces using low temperature remote plasma processing
-
Johnson R.S., Niimi H., and Lucovsky G. New approach for the fabrication of device-quality GeO/GeO2/SiO2 interfaces using low temperature remote plasma processing. J. Vac. Sci. Technol. A 18 (2000) 1230-1233
-
(2000)
J. Vac. Sci. Technol. A
, vol.18
, pp. 1230-1233
-
-
Johnson, R.S.1
Niimi, H.2
Lucovsky, G.3
-
12
-
-
0012200320
-
Role of hydrogen surface coverage during anodic plasma deposition of hydrogenated nanocrystalline germanium
-
Poulsen P.R., Wang M., Xu J., Li W., Chen K., Wang G., and Feng D. Role of hydrogen surface coverage during anodic plasma deposition of hydrogenated nanocrystalline germanium. J. Appl. Phys. 84 (1998) 3386-3391
-
(1998)
J. Appl. Phys.
, vol.84
, pp. 3386-3391
-
-
Poulsen, P.R.1
Wang, M.2
Xu, J.3
Li, W.4
Chen, K.5
Wang, G.6
Feng, D.7
-
13
-
-
33747402611
-
Fabrication and characterisation of crystalline silicon thin-film materials for solar cells
-
Aberle A.G. Fabrication and characterisation of crystalline silicon thin-film materials for solar cells. Thin Solid Films 511-512 (2006) 26-34
-
(2006)
Thin Solid Films
, vol.511-512
, pp. 26-34
-
-
Aberle, A.G.1
-
15
-
-
0020204008
-
Structure of vapor-deposited Ge films as a function of substrate temperature
-
Evangelisti F., Garozzo M., and Conte G. Structure of vapor-deposited Ge films as a function of substrate temperature. J. Appl. Phys. 53 (1982) 7390-7396
-
(1982)
J. Appl. Phys.
, vol.53
, pp. 7390-7396
-
-
Evangelisti, F.1
Garozzo, M.2
Conte, G.3
-
16
-
-
4244089094
-
Raman spectroscopy of germanium films deposited with cluster-beam technique
-
Wakaki M., Iwase M., Show Y., Koyama K., Sato S., Nozaki S., and Morisaki H. Raman spectroscopy of germanium films deposited with cluster-beam technique. Physica B 219/220 (1996) 535-537
-
(1996)
Physica B
, vol.219-220
, pp. 535-537
-
-
Wakaki, M.1
Iwase, M.2
Show, Y.3
Koyama, K.4
Sato, S.5
Nozaki, S.6
Morisaki, H.7
-
17
-
-
0000278707
-
Incipient amorphous-to-crystalline transition in Ge
-
Stern C.E.B.E.A., von Roedern B., and Azoulay J. Incipient amorphous-to-crystalline transition in Ge. Phys. Rev. B 27 (1983) 6557-6560
-
(1983)
Phys. Rev. B
, vol.27
, pp. 6557-6560
-
-
Stern, C.E.B.E.A.1
von Roedern, B.2
Azoulay, J.3
-
18
-
-
0030644482
-
Preparation of poly-Ge considering its application to a-Si/poly-Ge multilayer structure by a low-temperature solid phase crystallization method
-
Maruyama E., Haku H., Tanaka M., Kiyama S., and Tsuda S. Preparation of poly-Ge considering its application to a-Si/poly-Ge multilayer structure by a low-temperature solid phase crystallization method. Jpn. J. Appl. Phys. 36 (1997) 262-266
-
(1997)
Jpn. J. Appl. Phys.
, vol.36
, pp. 262-266
-
-
Maruyama, E.1
Haku, H.2
Tanaka, M.3
Kiyama, S.4
Tsuda, S.5
-
19
-
-
0037370275
-
(>1-mm), recrystallized germanium films on alumina, fused silica, oxide-coated silicon substrates for III-V solar cell applications
-
Mauk M.G., Balliet J.R., Feyock B.W., and Large-grain. (>1-mm), recrystallized germanium films on alumina, fused silica, oxide-coated silicon substrates for III-V solar cell applications. J. Cryst. Growth 250 (2003) 50-56
-
(2003)
J. Cryst. Growth
, vol.250
, pp. 50-56
-
-
Mauk, M.G.1
Balliet, J.R.2
Feyock, B.W.3
Large-grain4
-
20
-
-
0031117526
-
Germanium thin film formation by low-pressure chemical vapor deposition
-
Meng Z., Jin Z., Gururaj B.A., Chu P., Kwok H.S., and Wong M. Germanium thin film formation by low-pressure chemical vapor deposition. J. Electrochem. Soc. 144 (1997) 1423-1429
-
(1997)
J. Electrochem. Soc.
, vol.144
, pp. 1423-1429
-
-
Meng, Z.1
Jin, Z.2
Gururaj, B.A.3
Chu, P.4
Kwok, H.S.5
Wong, M.6
-
21
-
-
40749114671
-
Evolution of Si (and SiC) nanocrystal precipitation in SiC matrix
-
Song D., Cho E.C., Cho Y.H., Conibeer G., Huang Y., Huang S., and Green M.A. Evolution of Si (and SiC) nanocrystal precipitation in SiC matrix. Thin Solid Films 516 (2008) 3824-3830
-
(2008)
Thin Solid Films
, vol.516
, pp. 3824-3830
-
-
Song, D.1
Cho, E.C.2
Cho, Y.H.3
Conibeer, G.4
Huang, Y.5
Huang, S.6
Green, M.A.7
-
23
-
-
0000345863
-
Structure and grain boundary defects of recrystallized silicon films prepared from amorphous silicon deposited using disilane
-
Hasegawa S., Watanabe S., Inokuma T., and Kurata Y. Structure and grain boundary defects of recrystallized silicon films prepared from amorphous silicon deposited using disilane. J. Appl. Phys. 77 (1995) 1938-1947
-
(1995)
J. Appl. Phys.
, vol.77
, pp. 1938-1947
-
-
Hasegawa, S.1
Watanabe, S.2
Inokuma, T.3
Kurata, Y.4
-
24
-
-
0033677268
-
Structure evolution during processing of polycrystalline films
-
Thompson C.V. Structure evolution during processing of polycrystalline films. Annu. Rev. Mater. Sci. 30 (2000) 159-190
-
(2000)
Annu. Rev. Mater. Sci.
, vol.30
, pp. 159-190
-
-
Thompson, C.V.1
-
26
-
-
0036137166
-
Microstructural characterization of rf sputtered polycrystalline silicon germanium films
-
Choi W.K., Teh L.K., Bera L.K., Chim W.K., Wee A.T.S., and Jie Y.X. Microstructural characterization of rf sputtered polycrystalline silicon germanium films. J. Appl. Phys. 91 (2002) 444-450
-
(2002)
J. Appl. Phys.
, vol.91
, pp. 444-450
-
-
Choi, W.K.1
Teh, L.K.2
Bera, L.K.3
Chim, W.K.4
Wee, A.T.S.5
Jie, Y.X.6
-
27
-
-
33746047661
-
Low-temperature solid-phase crystallization of amorphous silicon thin films deposited by rf magnetron sputtering with substrate bias
-
022104-1-3
-
Jun S.-I., Racka P.D., McKnight T.E., Melechko A.V., and Simpson M.L. Low-temperature solid-phase crystallization of amorphous silicon thin films deposited by rf magnetron sputtering with substrate bias. Appl. Phys. Lett. 89 (2006) 022104-1-3
-
(2006)
Appl. Phys. Lett.
, vol.89
-
-
Jun, S.-I.1
Racka, P.D.2
McKnight, T.E.3
Melechko, A.V.4
Simpson, M.L.5
-
28
-
-
0019529986
-
Optical reflectance: a sensitive nondestructive method for detecting surface damage in crystalline GaAs and other semiconductors
-
Zanzucchi P.J., and Frenchu W.R. Optical reflectance: a sensitive nondestructive method for detecting surface damage in crystalline GaAs and other semiconductors. Appl. Opt. 20 (1981) 643-646
-
(1981)
Appl. Opt.
, vol.20
, pp. 643-646
-
-
Zanzucchi, P.J.1
Frenchu, W.R.2
-
29
-
-
49049133988
-
Measurement of the near-surface crystallinity of silicon on sapphire by UV reflectance
-
Duffy M.T., Corboy J.F., Cullen G.W., Smith R.T., and Soltis R.A. Measurement of the near-surface crystallinity of silicon on sapphire by UV reflectance. J. Cryst. Growth 58 (1982) 10-18
-
(1982)
J. Cryst. Growth
, vol.58
, pp. 10-18
-
-
Duffy, M.T.1
Corboy, J.F.2
Cullen, G.W.3
Smith, R.T.4
Soltis, R.A.5
-
30
-
-
0025385830
-
Assessment of the surface quality of SIMOX wafers by UV Reflectance
-
Harbeke G., and Jostrzebski L. Assessment of the surface quality of SIMOX wafers by UV Reflectance. J. Electrochem. Soc. 137 (1990) 696-699
-
(1990)
J. Electrochem. Soc.
, vol.137
, pp. 696-699
-
-
Harbeke, G.1
Jostrzebski, L.2
-
31
-
-
0033170289
-
Subwavelength-structured antireflective surfaces on glass
-
Gombert A., Glaubitt W., Rose K., Dreibholz J., BlaÈsi B., Heinzel A., Sporn D., DoÈll W., and Wittwer V. Subwavelength-structured antireflective surfaces on glass. Thin Solid Films 351 (1999) 73-78
-
(1999)
Thin Solid Films
, vol.351
, pp. 73-78
-
-
Gombert, A.1
Glaubitt, W.2
Rose, K.3
Dreibholz, J.4
BlaÈsi, B.5
Heinzel, A.6
Sporn, D.7
DoÈll, W.8
Wittwer, V.9
-
32
-
-
67349271876
-
Effect of surface damage on the reflectance of germanium
-
Donovan T.M., Ashely E.J., and Bennett H.E. Effect of surface damage on the reflectance of germanium. J. Opt. Soc. Am. 53 (1963) 1403-1409
-
(1963)
J. Opt. Soc. Am.
, vol.53
, pp. 1403-1409
-
-
Donovan, T.M.1
Ashely, E.J.2
Bennett, H.E.3
-
33
-
-
36849108288
-
Optical properties of thin germanium films in the wavelength range 2000-6000 Å
-
Grant P.M., and Paul W. Optical properties of thin germanium films in the wavelength range 2000-6000 Å. J. Appl. Phys. 37 (1966) 3110-3120
-
(1966)
J. Appl. Phys.
, vol.37
, pp. 3110-3120
-
-
Grant, P.M.1
Paul, W.2
-
34
-
-
33847596250
-
Dielectric functions and optical parameters of S, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
-
Aspnes D.E., and Studna A.A. Dielectric functions and optical parameters of S, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV. Phys. Rev. B 27 (1983) 985-1009
-
(1983)
Phys. Rev. B
, vol.27
, pp. 985-1009
-
-
Aspnes, D.E.1
Studna, A.A.2
-
35
-
-
30244492948
-
Optical properties of dense thin-film Si and Ge prepared by ion-beam sputtering
-
Collins H.W.R.W., Cavese J.M., and Gonzalez-Hernandez J. Optical properties of dense thin-film Si and Ge prepared by ion-beam sputtering. J. Appl. Phys. 58 (1985) 954-957
-
(1985)
J. Appl. Phys.
, vol.58
, pp. 954-957
-
-
Collins, H.W.R.W.1
Cavese, J.M.2
Gonzalez-Hernandez, J.3
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