Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing

Journal of Applied Physics

Volumn 95, Issue 11 I, 2004, Pages 6457-6461

  Watakabe, H ^a   Sameshima, T ^a   Kanno, H ^b   Sadoh, T ^b   Miyao, M ^b  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTALLIZATION; ETCHING; GERMANIUM; GLASS; GRAIN SIZE AND SHAPE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; PULSED LASER APPLICATIONS; THIN FILM TRANSISTORS;

CRYSTALLINE VOLUME RATIO; LASER ENERGY DENSITY; PLASMA TREATMENT; PULSED-LASER ANNEALING;

THIN FILMS;

EID: 2942631231     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1707216     Document Type: Article

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