Direct formation of strained Si on insulator by laser annealing

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 96-98

  Tsunoda, Isao ^a   Matsuura, Ryo ^a   Tanaka, Masanori ^a   Watakabe, Hajime ^b   Sameshima, Toshiyuki ^b   Miyao, Masanobu ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Laser annealing; Raman scattering spectroscopy; Silicon on insulator; Strained Si

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; LASERS; RAMAN SCATTERING; SILICON; SPECTROSCOPIC ANALYSIS; SURFACE ROUGHNESS;

LASER ANNEALING; SIGE BUFFER; SPECTROSCOPIC ELLIPSOMETRY; STRAINED SI;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33646100532     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.415     Document Type: Article

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