Orientation control of location-controlled Si crystal grain by combining Ni nano-imprint and excimer laser annealing with Si double-layer process

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 46-50, 2006, Pages

  Nakagawa, Gou ^a   Asano, Tanemasa ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Excimer laser annealing; Location control; Metal induced crystallization; Ni nano imprint; Orientation control; Poly Si; Thin film transistor

Indexed keywords

ANNEALING; CRYSTAL GROWTH; CRYSTAL ORIENTATION; EXCIMER LASERS; NANOTECHNOLOGY; NICKEL COMPOUNDS; THIN FILM TRANSISTORS;

EXCIMER LASER ANNEALING; LOCATION CONTROL; METAL-INDUCED CRYSTALLIZATION; NI NANO-IMPRINT; ORIENTATION CONTROL;

SILICON COMPOUNDS;

EID: 34547898060     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L1293     Document Type: Article

References (12)

1. C.H. Oh, M. Ozawa and M. Matsumura: Jpn. J. Appl. Phys. 37 (1998) L492.
2. R. Ishihara, P. C. van der Wilt, B. D. van Dijk, A. Burtsev, J. W. Metselaar and C. I. M. Beenakker: Dig. Tech. Pap., 2002 Int. Workshop Active-Matrix Liquid-Crystal Displays, p. 53.
3. H. Kumomi: Appl. Phys. Lett. 83 (2003) 434.
4. H. Kumomi, C. Shin, G. Nakagawa and T. Asano: IEDM Tech. Dig., 2004, p. 32.2.1.
5. G. Nakagawa, T. Asano and M. Miyasaka: Jpn. J. Appl. Phys. 45 (2006) 4335.
6. G. Nakagawa and T. Asano: Dig. Tech. Pap., 2006 Int. TFT Conf., p. 198.
7. G. Nakagawa and T. Asano: to be published in Mater. Res. Soc. Symp. Proc. 910 (2006).
8. G. Nakagawa and T. Asano: presented at the Autumn Meeting of the Japan Society of Applied Physics, No. 29a-ZQ-2, 2006.
9. K. Makihira and T. Asano: Appl. Phys. Lett. 76 (2000) 3774.
10. K. Makihira and T. Asano: Dig. Tech. Pap., 2000 Int. Workshop Active-Matrix Liquid-Crystal Displays, p. 33.
11. K. Makihira, M. Yoshii and T. Asano: Jpn. J. Appl. Phys. 42 (2003) 1983.
12. J. Jang: Solid State Phenom. 93 (2003) 199.