Enhanced crystal nucleation in a-SiGe/SiO 2 by ion-irradiation assisted annealing

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 231-234

  Tsunoda, Isao ^a   Kenjo, Atsushi ^a   Sadoh, Taizoh ^a   Miyao, Masanobu ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Ion beam stimulation; Nucleation; SiGe; SiO 2; Solid phase crystallization

Indexed keywords

ACTIVATION ENERGY; ANNEALING; AUGER ELECTRON SPECTROSCOPY; CRYSTAL GROWTH; CRYSTALLIZATION; DOPING (ADDITIVES); ION BEAMS; LIQUID CRYSTAL DISPLAYS; MOLECULAR BEAM EPITAXY; NUCLEATION; THIN FILM TRANSISTORS; X RAY DIFFRACTION;

ION-BEAM STIMULATION; SIGE; SOLID-PHASE CRYSTALLIZATION;

SILICON COMPOUNDS;

EID: 1142268141     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.051     Document Type: Conference Paper

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