A simple method for measuring Si-Fin sidewall roughness by AFM

IEEE Transactions on Nanotechnology

Volumn 8, Issue 5, 2009, Pages 611-616

  Tang, Xiaohui ^a   Bayot, Vincent ^a   Reckinger, Nicolas ^a   Flandre, Denis ^a   Raskin, Jean Pierre ^a   Dubois, Emmanuel ^b   Nysten, Bernard ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

Atomic force microscopy (AFM); FinFET; Roughness of silicon fin sidewall; Sacrificial oxidation

Indexed keywords

AFM; ATOMIC FORCE MICROSCOPY (AFM); ELECTRICAL BEHAVIORS; FINFET; FINFETS; GATE OXIDE RELIABILITY; NANO-ELECTROMECHANICAL; NANO-METER-SCALE; POLYSILICON GATES; POST-ETCH TREATMENTS; ROUGHNESS OF SILICON FIN SIDEWALL; SACRIFICIAL OXIDATION; SIDEWALL MORPHOLOGY; SIDEWALL ROUGHNESS; SILICON FINS; SIMPLE METHOD; STRUCTURAL PARAMETER; SURFACE CHARACTERISTICS;

ATOMIC FORCE MICROSCOPY; FIELD EFFECT TRANSISTORS; FORCED CONVECTION; OXIDATION; POLYSILICON; REACTIVE ION ETCHING; SURFACE ROUGHNESS; SURFACES;

FINS (HEAT EXCHANGE);

EID: 70349312768     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2009.2021064     Document Type: Article

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