Transition from two-dimensional to three-dimensional quantum confinement in semiconductor quantum wires/quantum dots

Nano Letters

Volumn 7, Issue 8, 2007, Pages 2227-2233

  Zhu, Q ^a   Karlsson, K F ^a   Pelucchi, E ^a,b   Kapon, E ^a  

^a EPFL   (Switzerland)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; VAPOR PHASE EPITAXY;

GROUND-STATE EMISSIONS; SELF-ASSEMBLED NANOSTRUCTURES; THREE-DIMENSIONAL QUANTUM CONFINEMENT; VALENCE BAND MIXING;

QUANTUM CONFINEMENT;

NANOTUBE; QUANTUM DOT;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; ELECTRON TRANSPORT; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

COMPUTER SIMULATION; CRYSTALLIZATION; ELECTRON TRANSPORT; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MODELS, CHEMICAL; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; QUANTUM DOTS; SEMICONDUCTORS; SURFACE PROPERTIES;

EID: 34548156061     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0706650     Document Type: Article

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