Characterization of ultrathin SOI film and application to short channel MOSFETs

Nanotechnology

Volumn 19, Issue 16, 2008, Pages

  Tang, Xiaohui ^a   Reckinger, Nicolas ^a   Larrieu, Guilhem ^b   Dubois, Emmanuel ^b   Flandre, Denis ^a   Raskin, Jean Pierre ^a   Nysten, Bernard ^a   Jonas, Alain M ^a   Bayot, Vincent ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; FILM THICKNESS; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SPECTROSCOPIC ELLIPSOMETRY;

CURRENT DRIVES; THINNING PROCESSES;

ULTRATHIN FILMS;

METAL OXIDE; SILICON;

ACCURACY; ARTICLE; ELLIPSOMETRY; EVALUATION; FILM; INSULATOR ELEMENT; MEASUREMENT; OXIDATION; PRIORITY JOURNAL; SEMICONDUCTOR; SPECTROSCOPY; STRESS; THICKNESS; VELOCITY; X RAY ANALYSIS;

EID: 42449130586     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/16/165703     Document Type: Article

References (47)

1. Noguchi M, Numata T, Mitani Y, Shino T, Kawanaka S, Oowaki Y and Toriumi A 2001 Back gate effects on threshold voltage sensitivity to SOI thickness in fully-depleted SOI MOSFETs IEEE Electron Device Lett. 22 32-4
2. Philip Wong H-S, Frank D J and Solomon P M 1998 Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET's at the 25 nm channel length generation IEDM pp 407-10
3. Veeraraghavan S and Fossum J G 1989 Short-channel effects in SOI MOSFETs IEEE Trans. Electron Devices 36 522-8
4. Yoshimi M, Hazama H, Takahashi M, Kambayashi S, Wada T, Kato K and Tango H 1989 Two-dimensional simulation and measurement of high-performance MOSFETs made on very thin SOI film IEEE Trans. Electron Devices 36 493-503
5. Ono Y, Takahashi Y, Yamazaki K, Nagase M, Namatsu H, Kurihara K and Murase K 1999 Si complementary single-electron inverter IEDM pp 367-70
6. Tang X, Baie X, Colinge J P, Loumaye P, Renaux C and Bayot V 2001 Influence of device geometry on SOI single-hole transistor characteristics Microelectron. Reliab. 41 1841-6
7. Takahashi Y, Namatsu H, Kurihara K, Iwadate K, Nagase M and Murase K 1996 Size dependence of the characteristics of Si single-electron transistor on SIMOX substrates IEEE Trans. Electron. Device 43 1213-7
8. Hahm J-I and Lieber C M 2004 Direct ultrasensitive electrical detection of DNA and DNA sequence variations using nanowire nanosensors Nano Lett. 4 51-4
9. Powell A R, Lyer S S and LeGoues F K 1994 New approach to the growth of low dislocation relaxed SiGe material Appl. Phys. Lett. 64 1856-8
10. Freund L B and Nix W D 1996 A critical thickness condition for a strained compliant substrate/epitaxial film system Appl. Phys. Lett. 69 173-5
11. Hobart K D, Kub F J, Jernigan G G, Twigg M E and Thompson P E 1998 Fabrication of SOI substrates with ultra-thin Si layers Electron. Lett. 34 1265-6
12. Imai K, Doken M and Ariyoshi H 1978 CMOS devices fabricated on buried silicon dioxide layers formed by oxygen implantation into silicon Electron. Lett. 14 593-7
13. Bruel M 1995 Silicon on insulator material technology Electron. Lett. 31 1201-2
14. Yonehara T, Sakaguchi K and Sato N 1994 Epitaxial layer transfer by bond and etch back of porous Si Appl. Phys. Lett. 64 2108-10
15. y strain layers for fabrication of Si and Ge-rich SIO device layers 2001 IEEE Int. SOI Conf. pp 11-2
16. Lifshitz N 1983 Study of breakdown fields of oxides grown on reactive ion etched silicon surface: improvement of breakdown limits by oxidation of the surface J. Electrochem. Soc. 130 1549-50
17. Popov V P, Antonova I V, Stas V F, Mironova L V, Gutakovskii A K, Spesivtsev E V, Mardegzhov A S, Franznusov A A and Feofanov G N 2000 Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technology Mater. Sci. Eng. B 73 82-6
18. Naumova O V, Antonova I V, Popov V P, Nastaushev Yu V, Gavrilova T A, Litvin L V and Aseev A L 2003 Modification of silicon-on-insulator structures under nano-scale devices fabrication Microelectron. Eng. 69 168-72
19. Naruoka H, Iwamatsu T, Tanaka T, Hattori N, Ipposhi T, Yamamoto H, Mashiko Y, Sudo M and Nakai T 2000 Evaluation of surface defects on SIMOX and their influences on device characteristics J. Cryst. Growth 210 40-4
20. Nuryadi R, Ishikawa Y and Tabe M 2000 Formation and ordering of self-assemble Si islands by ultrahigh vacuum annealing of ultrathin bonded silicon-on-insulator structure Appl. Surf. Sci. 159 121-6
21. Shin H, Hong S, Wetteroth T and Wilson S R 1998 Leakage current models of thin film silicon-on-insulator devices Appl. Phys. Lett. 72 1199-201
22. Turner D R 1962 The Electrochemistry of Semiconductors ed P J Holmes (London: Academic) p 329
23. Lee D B 1969 Anisotropic etching of silicon J. Appl. Phys. 40 4569-74
24. Crishal J M and Harrington A L 1962 A selective etch for elemental silicon J. Electrochem. Soc. 111 202-4
25. Kern W and Puotinen D A 1970 Cleaning solutions based on hydrogen-peroxide for use in silicon semiconductor technology RCA Rev. 31 187-206
26. Celler G K, Barr D L and Rosamilia J M 1999 Thinning Si wafers by the SC1 standard clean 1999 IEEE Int. SOI Conf. pp 114-5
27. 4OH-based etchants for silicon micromaching Sensors Actuators A 23 1031-5
28. 4OH-based etchants for silicon micromaching: influence of additives and stability of passivation layers Sensors Actuators A 25 1-7
29. Nojiri H and Uchiyama M 1992 Bias-dependent etching of silicon in aqueous ammonia Sensors Actuators A 34 167
30. Seidel H, Csepregi L, Heuberger A and Baumgärtel H 1990 Anisotropic etching of crystalline silicon in alkaline solutions I orientation dependence and behaviour of passivation layers J. Electrochem. Soc. 137 3612-25
31. Chen L-C, Chen M, Tsaur T-H, Lien C and Wan C-C 1995 Selective etching of silicon in aqueous ammonia solution Sensors Actuators A 49 115-21
32. Zhang X G 2001 Electrochemistry of Silicon and its Oxide (New York: Kluwer Academic/Plenum) p 300
33. Seidel H, Csepregi L, Heuberger A and Baumgärtel H 1990 Anisotropic etching of crystalline silicon in alkaline solutions, II. influence of dopants J. Electrochem. Soc. 137 3626-32
34. Cohen G M, Mooney P M, Park H, Cabral C Jr and Jones E C 2003 High-resolution x-ray diffraction for characterization and monitoring of silicon-on-insulator fabrication process J. Appl. Phys. 93 245-50
35. Daillant J and Gibaud A 1999 X-Ray and Neutron Reflectivity: Principles and Applications (Berlin: Springer)
36. Petti C J, Mcvittie J P and Plummer J D 1988 IEDM Tech., Dig. pp 104-7
37. Ohmi T, Miyashita M, Itano M, Imaoka T and Kawanabe I 1992 Dependence of thin-oxide films quality on surface microroughness IEEE Trans. Electron devices 39 537-45
38. Pratt W K 1991 Digital Image Processing (New York: Wiley) p 13
39. Sinha S K, Sirota E B, Garoff S and Stanley H B 1988 X-ray and neutron scattering from rough surfaces Phys. Rev. B 38 2297-311
40. Naruoka H, Iwamatsu T, Tanaka T, Hattori N, Ipposhi T, Yamamoto H, Mashiko Y, Sudo M and Nakai T 2000 Evaluation of surface defects on SIMOX and their influences on devices characteristics J. Cryst. Growth 210 40-4
41. Ohring M 2002 Material Science of Thin Films, Deposition and Structure, Mechanical Properties of Thin Films 2nd edn (New York: Academic) chapter 12
42. Freund L B and Suresh S 2003 Thin Film Materials Stress, Defect Formation and Surface Evolution (Cambridge: Cambridge University Press) p 92
43. Sze S M 1983 Vlsi Technology (New York: McGraw-Hill) p 156
44. 2 interface J. Appl. Phys. 37 2429
45. Lee J-W, Nam M-H, Oh J-H, Yang J-W, Lee W-C, Kim H-K, Oh M-R and Koh Y-H 1998 Effects of buried oxide stress on thin-film silicon-on-insulator metal-oxide-semiconductor field-effect transistor Appl. Phys. Lett. 72 677-9
46. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley) p 29
47. Larrieu G, Dubois E, Valentin R, Breil N, Danneville F, Dambrine G, Pesant J C and Raskin J P 2007 Low temperature implementation of dopant segregated band-edge metallic S/Djunctions in thin-body SOI p-MOSFETs IEDM Tech. Dig. (Dec.) pp 147-50