Smoothing of Si trench sidewall surface by chemical dry etching and sacrificial oxidation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 7, 1998, Pages 3954-3955

  Yahata, Akihiro ^a   Urano, Satoshi ^a   Inoue, Tomoki ^a   Shinohe, Takashi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Atomic force microscopy; Chemical dry etching; MOS; Sacrificial oxidation; Sidewall; Smoothing; Trench

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; OXIDATION; SEMICONDUCTING SILICON;

SMOOTHING; TRENCH;

MOS DEVICES;

EID: 0032114638     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.3954     Document Type: Article

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