Microstructural control of Cr-Si-N films by a hybrid arc ion plating and magnetron sputtering process

Acta Materialia

Volumn 57, Issue 17, 2009, Pages 4974-4987

  Wang, Qi Min ^a,b,c   Kim, Kwang Ho ^a  

^a Pusan National University   (South Korea)

^b INSTITUTE OF METAL RESEARCH   (China)

^c BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Cr Si N; Nanocomposite; Nanocrystalline microstructure; Physical vapor deposition; Transmission electron microscopy

Indexed keywords

AMORPHOUS MATRICES; ARC ION PLATING; CR-SI-N; KINETIC FACTORS; MAGNETRON SPUTTERING PROCESS; MATRIX; MICROSTRUCTURAL CONTROL; MICROSTRUCTURE EVOLUTIONS; NANO-COLUMNS; NANOCOMPOSITE MICROSTRUCTURE; NANOCRYSTALLINE MICROSTRUCTURE; NEGATIVE BIAS; SI CONTENT; SIN FILMS; SPUTTERING POWER; SUBSTRATE BIAS VOLTAGES;

AMORPHOUS SILICON; BIAS VOLTAGE; CAVITY RESONATORS; CHROMIUM; ELECTRON MICROSCOPY; FILM GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION IMPLANTATION; MAGNETRONS; METALLIC FILMS; MICROCRYSTALLINE SILICON; MICROSTRUCTURE; NANOCOMPOSITES; NANOCRYSTALLINE MATERIALS; PHYSICAL VAPOR DEPOSITION; PLATING; SILICON; SILICON NITRIDE; VAPORS;

AMORPHOUS FILMS;

EID: 69949142905     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2009.07.001     Document Type: Article

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