Structure and properties of Ti-Si-N films with ∼ 10 at.% Si deposited using reactive magnetron sputtering with high-flux low-energy ion assistance

Thin Solid Films

Volumn 516, Issue 19, 2008, Pages 6548-6552

  Li, Z G ^a   Miyake, S ^b   Makino, M ^c   Wu, Y X ^a  

^a Shanghai Jiao Tong University   (China)

^b KINKI UNIVERSITY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

Hardness; Ion irradiation; Microstructure; Sputtering; Ti Si N films

Indexed keywords

INDUCTIVELY COUPLED PLASMA; MAGNETRONS; METALLIC FILMS; PHOTORESISTS; PULSED LASER DEPOSITION; REACTIVE SPUTTERING; SILICON; SPUTTER DEPOSITION; STRUCTURAL PROPERTIES; TITANIUM COMPOUNDS;

(100) SILICON; COUPLED PLASMAS; DC-MAGNETRON SPUTTERING; LOW ENERGIES; REACTIVE MAGNETRON SPUTTERING (RMS); STRUCTURE AND PROPERTIES; TI-SI-N;

MAGNETRON SPUTTERING;

EID: 45449104250     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.11.026     Document Type: Article

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