Relationship between resolution, line edge roughness, and sensitivity in chemically amplified resist of post-optical lithography revealed by monte carlo and dissolution simulations

Applied Physics Express

Volumn 2, Issue 7, 2009, Pages

  Saeki, Akinori ^a   Kozawa, Takahiro ^a   Tagawa, Seiichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACID DIFFUSION LENGTH; CHEMICALLY AMPLIFIED RESIST; ELECTRIC CIRCUIT; EXPOSURE DOSE; EXTREME ULTRAVIOLET; HIGH RESOLUTION; LINE EDGE ROUGHNESS; MASS PRODUCTION; MONTE CARLO; POSITIVE-TONE; POST-OPTICAL LITHOGRAPHY; SIMULTANEOUS ACHIEVEMENT; SQUARE ROOTS; STRONG DEMAND; ULTRA-SMALL;

DISSOLUTION; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; MONTE CARLO METHODS; PHOTORESISTORS; PHOTORESISTS;

ROUGHNESS MEASUREMENT;

EID: 68249085832     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.075006     Document Type: Article

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