Simulation of amine concentration dependence on line edge roughness after development in electron beam lithography

Journal of Applied Physics

Volumn 104, Issue 2, 2008, Pages

  Saeki, Akinori ^a   Kozawa, Takahiro ^a   Tagawa, Seiichi ^a   Cao, Heidi B ^b   Deng, Hai ^b   Leeson, Michael J ^b  

^a OSAKA UNIVERSITY   (Japan)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMINATION; AMINES; CONCENTRATION (PROCESS); DISSOLUTION; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRON GUNS; ELECTRON OPTICS; ELECTRONICS INDUSTRY; MARKOV PROCESSES; MICROELECTRONICS; MONTE CARLO METHODS; NANOLITHOGRAPHY; OPTICAL DESIGN; ORGANIC COMPOUNDS; PARTICLE BEAMS; ROUGHNESS MEASUREMENT; SEMICONDUCTOR DOPING;

ACID DIFFUSION LENGTH; CONCENTRATION DEPENDENCES; DEVELOPMENT PROCESSES; DIFFUSION PROCESSES; DISSOLUTION MODEL; EXPOSURE DOSE; FABRICATION ACCURACY; HIGH FREQUENCIES; IMAGE CONTRASTS; LATENT IMAGES; LINE-EDGE ROUGHNESS; MONTE CARLO TECHNIQUES; POSITIVE-TONE;

PHOTORESISTS;

EID: 48849110202     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2952046     Document Type: Article

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